The kinetics of the growth mechanism of Hg1-xCdxTe films made using open tube isothermal vapour phase epitaxy (ISOVPE) is discussed, and two new parameters in the process are included with respect to the previous models: surface reaction and the use of Hg1-xCdxTe sources with low values of x. A comparison between experimental data and the theoretical predictions of Cd composition profile and film thickness suggest that the surface reaction can be considered to be a limiting factor in the growth process.
Kinetic study of the ISOVPE process of HgCdTe films
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1994
Abstract
The kinetics of the growth mechanism of Hg1-xCdxTe films made using open tube isothermal vapour phase epitaxy (ISOVPE) is discussed, and two new parameters in the process are included with respect to the previous models: surface reaction and the use of Hg1-xCdxTe sources with low values of x. A comparison between experimental data and the theoretical predictions of Cd composition profile and film thickness suggest that the surface reaction can be considered to be a limiting factor in the growth process.File in questo prodotto:
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