The anomalous diffusion of Fe implanted into InP has been studied by SIMS and TEM. From the close correspondence, observed in the annealed samples, between the positions of the two Fe accumulation peaks around R-p + Delta R-p and the positions of the end of range loops and of the bottom interface of the twin band, respectively, it is suggested that the Fe distribution can be affected by gettering at the mentioned crystal defects. The origin of the Fe peak at 0.8 R-p is also discussed.

Distribution of Fe and extended defects in Fe-implanted InP

1997

Abstract

The anomalous diffusion of Fe implanted into InP has been studied by SIMS and TEM. From the close correspondence, observed in the annealed samples, between the positions of the two Fe accumulation peaks around R-p + Delta R-p and the positions of the end of range loops and of the bottom interface of the twin band, respectively, it is suggested that the Fe distribution can be affected by gettering at the mentioned crystal defects. The origin of the Fe peak at 0.8 R-p is also discussed.
1997
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
A. G. Cullis and J. L. Hutchinson
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
523
526
0-7503-0464-2
IOP Publishing Ltd.
Bristol BS1 6BE
REGNO UNITO DI GRAN BRETAGNA
Sì, ma tipo non specificato
7-10 April 1997
Oxford (UK)
InP
Fe
implantation
TEM
7
none
C Frigeri a, ; A Carnera b, ; B Fraboni b, ; A Gasparotto b, ; F Priolo c, ; A Camporese d, ; G Rossetto d,
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123328
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