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We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.

Deep levels characterization in high temperature iron implanted InP

Impellizzeri G;Priolo F
2005

Abstract

We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
2005
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
IEEE (Institute of Electrical and Electronics Engineers), 2005 International Conference of Indium Phosphide and Related Materials 0-7803-8891-7, 410 (2005), USA
2005 International Conference of Indium Phosphide and Related Materials
410
4
0-7803-8891-7
USA
WOS:000232220700108
2
none
Fraboni B.; Gasparotto A.; Cesca T.; Verna A.; Impellizzeri G.; Priolo F.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123638
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