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We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.

High Resistivity in GaInP/GaAs by High Temperture Fe Ion Implantation

Impellizzeri G;Priolo F;
2005

Abstract

We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.
2005
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
IEEE (Institute of Electrical and Electronics Engineers), 2005 International Conference of Indium Phosphide and Related Materials 0-7803-8891-7, 653 (2005), USA
2005 International Conference of Indium Phosphide and Related Materials
653
4
0-7803-8891-7
USA
WOS:000232220700171
8
none
Cesca, T; Verna, A; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, L; Longo, M
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123644
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