The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 x 10(13) or 2 x 10(14) at cm(-2) and subsequently annealed at the maximum temperature of 750 degrees C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed.
Defect characterization in InP substrates implanted with 2 MeV Fe ions
1997
Abstract
The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 x 10(13) or 2 x 10(14) at cm(-2) and subsequently annealed at the maximum temperature of 750 degrees C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
