We have performed in situ transmission electron microscopy observations during room-temperature 100 keV P ion implantation in CdTe single crystals up to 1015 P/cm2. Beyond a defect-depleted zone whose thickness increases with the total fluence, interstitial loops lying in a {110} plane were observed. At least two Burgers' vector types (<100? and <110?) were determined. The results are explained in terms of the high interstitial defect mobility.
In situ transmission electron microscopy study of dislocation loops induced by P implantation in CdTe single crystals
G Leo;
1993
Abstract
We have performed in situ transmission electron microscopy observations during room-temperature 100 keV P ion implantation in CdTe single crystals up to 1015 P/cm2. Beyond a defect-depleted zone whose thickness increases with the total fluence, interstitial loops lying in a {110} plane were observed. At least two Burgers' vector types (<100? and <110?) were determined. The results are explained in terms of the high interstitial defect mobility.File in questo prodotto:
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