A prolonged reverse bias (RB) stress forcing a short-circuit current through a dye solar cell, corresponding to the harshest test a shadowed cell may experience in real conditions, can cause the RB operating voltage V-RB to drift with time, initially slowly but accelerating for V-RB<(-1.65 +/- 0.15)V when gas bubbles, identified as H-2 (gas chromatography), are produced inside the cell, leading to breakdown. A close connection between VRB, cell performance, and stability was established. Contributions to RB degradation include triiodide depletion and impurities, in particular water. Acting upon these components and setting up protection strategies is important for delivering long-lasting modules.
Reverse bias degradation in dye solar cells
Argazzi R;
2012
Abstract
A prolonged reverse bias (RB) stress forcing a short-circuit current through a dye solar cell, corresponding to the harshest test a shadowed cell may experience in real conditions, can cause the RB operating voltage V-RB to drift with time, initially slowly but accelerating for V-RB<(-1.65 +/- 0.15)V when gas bubbles, identified as H-2 (gas chromatography), are produced inside the cell, leading to breakdown. A close connection between VRB, cell performance, and stability was established. Contributions to RB degradation include triiodide depletion and impurities, in particular water. Acting upon these components and setting up protection strategies is important for delivering long-lasting modules.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
