We report a study of the lateral band bending at the Ge-GaSe interface. Spectromicroscopy measurements with synchrotron radiation were performed at the ESCA microscopy line of ELETTRA in Ge patterned films on GaSe substrates. Preliminary results of lateral band bending, chemical reactions and the beam stimulated Ge surface migration are presented. These studies allowed us to seek on the microscopical equivalent of the semiconductor Debye length and to probe the capabilities of scanning-focused spectromicroscopical systems.
Spectromicroscopy study of lateral band bending of the Ge-GaSe heterostructure
1996
Abstract
We report a study of the lateral band bending at the Ge-GaSe interface. Spectromicroscopy measurements with synchrotron radiation were performed at the ESCA microscopy line of ELETTRA in Ge patterned films on GaSe substrates. Preliminary results of lateral band bending, chemical reactions and the beam stimulated Ge surface migration are presented. These studies allowed us to seek on the microscopical equivalent of the semiconductor Debye length and to probe the capabilities of scanning-focused spectromicroscopical systems.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
