We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAs-Ge(001) heterojunctions. We found that well-defined in- equivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 12 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.
Microscopic Capacitors and Neutral Interfaces in III-V/IV/III-V Semiconductor Heterostructures
G Biasiol;L Sorba;
1992
Abstract
We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAs-Ge(001) heterojunctions. We found that well-defined in- equivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 12 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.File in questo prodotto:
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