Internal friction measurements in the kHz range have been performed on Ta containing D, O, and N at liquid-helium temperature. A relaxation process is observed below 60 K showing a sharp discontinuity in the slope at the normal-superconductor transition temperature. The process is interpreted as relaxation of a two-level system consisting of O (N)-D complexes interacting mainly with the conduction electrons.
Anelastic Relaxation due to the Tunneling of Trapped D in Tantalum
F Cordero
1987
Abstract
Internal friction measurements in the kHz range have been performed on Ta containing D, O, and N at liquid-helium temperature. A relaxation process is observed below 60 K showing a sharp discontinuity in the slope at the normal-superconductor transition temperature. The process is interpreted as relaxation of a two-level system consisting of O (N)-D complexes interacting mainly with the conduction electrons.File in questo prodotto:
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