We report on an X-ray diffraction study performed on Xe agglomerates obtained by ion implantation in a Si matrix. At low temperature, Xe nano-crystals were formed in Si with different average sizes according to the preparation procedure. High resolution diffraction spectra were detected as a function of the temperature, in the range 15-300 K, showing evidence of fine structure effects in the growth mode of the Xe nanocrystals. We report the first experimental observation of fcc crystalline agglomerates with a lattice parameter expanded by the epitaxial condensation on the Si cavities, whereas for small agglomerates randomly oriented evidence of a contracted lattice was found. For these nanocrystals, a solid-to-liquid transition temperature, size dependent, was detected; above the transition temperature, a fluid phase was observed. Neither overpressurized clusters were detected at any temperature, nor preferential binary size distribution as reported for a metal matrix.

Fine structure effects and phase transition of Xe nanocrystals in Si

2006

Abstract

We report on an X-ray diffraction study performed on Xe agglomerates obtained by ion implantation in a Si matrix. At low temperature, Xe nano-crystals were formed in Si with different average sizes according to the preparation procedure. High resolution diffraction spectra were detected as a function of the temperature, in the range 15-300 K, showing evidence of fine structure effects in the growth mode of the Xe nanocrystals. We report the first experimental observation of fcc crystalline agglomerates with a lattice parameter expanded by the epitaxial condensation on the Si cavities, whereas for small agglomerates randomly oriented evidence of a contracted lattice was found. For these nanocrystals, a solid-to-liquid transition temperature, size dependent, was detected; above the transition temperature, a fluid phase was observed. Neither overpressurized clusters were detected at any temperature, nor preferential binary size distribution as reported for a metal matrix.
2006
INFM
IMPLANTED AMORPHOUS SILICON
EPITAXIAL REGROWTH
HIGH-PRESSURE
XENON
SPECTROSCOPY
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/125796
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