P and B ions with energies of 400 keV and 1 MeV were implanted in a random direction and along the [100] axis of single-crystal Si samples patterned with oxide stripes. The lateral spread of the implants was deter-mined by using two-dimensional spreading resistance measurements. The lateral distribution of ions implanted in a random direction is always broader than that of ions implanted with the same energy along the [100] axis. With increasing dose the lateral penetration for channeled implants increases too due to the disorder introduced in the samples. The experimental results are discussed and then compared with Monte Carlo simulations obtained by the MARLOWE code.
2-DIMENSIONAL DISTRIBUTIONS OF IONS IMPLANTED IN CHANNELING AND RANDOM DIRECTIONS OF SI SINGLE-CRYSTALS
PRIVITERA V;
1993
Abstract
P and B ions with energies of 400 keV and 1 MeV were implanted in a random direction and along the [100] axis of single-crystal Si samples patterned with oxide stripes. The lateral spread of the implants was deter-mined by using two-dimensional spreading resistance measurements. The lateral distribution of ions implanted in a random direction is always broader than that of ions implanted with the same energy along the [100] axis. With increasing dose the lateral penetration for channeled implants increases too due to the disorder introduced in the samples. The experimental results are discussed and then compared with Monte Carlo simulations obtained by the MARLOWE code.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
