A special sample preparation and measurement procedure has been developed to measure two-dimensional carrier profiles in silicon by spreading resistance profiling (SRP) with 50 nm resolution. The raw data can be interpreted directly in terms of two-dimensional contour lines of the junction position. Furthermore, a simulation program has been developed that allows us also to obtain the lateral diffusion profiles from the measurements. Results are shown for 20 keV boron implants, 400 KeV and 1 MeV phosphorus implants as well as boron implants subjected to different annealing steps (furnace and short-time anneal). An enhanced lateral diffusion in the initial stages of the furnace annealing has been found.
A SPREADING RESISTANCE-BASED TECHNIQUE FOR 2-DIMENSIONAL CARRIER PROFILING
PRIVITERA V;
1993
Abstract
A special sample preparation and measurement procedure has been developed to measure two-dimensional carrier profiles in silicon by spreading resistance profiling (SRP) with 50 nm resolution. The raw data can be interpreted directly in terms of two-dimensional contour lines of the junction position. Furthermore, a simulation program has been developed that allows us also to obtain the lateral diffusion profiles from the measurements. Results are shown for 20 keV boron implants, 400 KeV and 1 MeV phosphorus implants as well as boron implants subjected to different annealing steps (furnace and short-time anneal). An enhanced lateral diffusion in the initial stages of the furnace annealing has been found.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
