We report on the transport properties of a quantum point contact defined by local anodic oxidation using an atomic force microscope on an AlGaAs/GaAs two-dimensional electron gas. Quantization of the conductance G in units of 2e(2)/h has been observed for temperatures ranging from 1.4 to 30 K. The evolution of the conductance plateaus has been studied as a function of the perpendicular magnetic field. The observed behavior agrees well with the one predicted and experimentally found on surface gated quantum point contacts.
Magnetic field and temperature dependence of an AFM-defined quantum point contact
M Lazzarino;D Ercolani;G Biasiol;L Sorba
2004
Abstract
We report on the transport properties of a quantum point contact defined by local anodic oxidation using an atomic force microscope on an AlGaAs/GaAs two-dimensional electron gas. Quantization of the conductance G in units of 2e(2)/h has been observed for temperatures ranging from 1.4 to 30 K. The evolution of the conductance plateaus has been studied as a function of the perpendicular magnetic field. The observed behavior agrees well with the one predicted and experimentally found on surface gated quantum point contacts.File in questo prodotto:
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