Boron and phosphorus ions at energies of 400 keV and 1 MeV were implanted along the [100] axis or in a random direction of silicon wafers covered by a sequence of 10-mu-m wide and 3-mu-m thick SiO2 stripes. Two-dimensional isoconcentration contour lines at the substrate doping level were determined by a new technique based on spreading resistance profiling. The lateral distribution under the mask of ions implanted in a random direction is always broader than that of ions implanted along the [100] axis. With increasing the dose of the channeled implants the lateral penetration also increases due to the scattering of channeled ions by the silicon atoms displaced from lattice sites
LATERAL STRAGGLING OF B AND P IONS IMPLANTED IN CHANNELING AND RANDOM DIRECTIONS OF SI SINGLE-CRYSTALS
PRIVITERA V;
1992
Abstract
Boron and phosphorus ions at energies of 400 keV and 1 MeV were implanted along the [100] axis or in a random direction of silicon wafers covered by a sequence of 10-mu-m wide and 3-mu-m thick SiO2 stripes. Two-dimensional isoconcentration contour lines at the substrate doping level were determined by a new technique based on spreading resistance profiling. The lateral distribution under the mask of ions implanted in a random direction is always broader than that of ions implanted along the [100] axis. With increasing the dose of the channeled implants the lateral penetration also increases due to the scattering of channeled ions by the silicon atoms displaced from lattice sitesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
