We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p-or an n-channel device. Therefore, ambipolar device operation over a wide range of operating voltages is difficult to realize. Here, we present a highly asymmetric heterostructure OFET architecture using the hole transport material pentacene and the ...

Light-emitting ambipolar organic heterostructure field-effect transistor

Mauro Murgia;Michele Muccini
2004

Abstract

We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p-or an n-channel device. Therefore, ambipolar device operation over a wide range of operating voltages is difficult to realize. Here, we present a highly asymmetric heterostructure OFET architecture using the hole transport material pentacene and the ...
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/127527
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