Lanthanum manganite doped with alkaline earths have become of interest for their magneto resistive properties. Pulsed laser ablation has been very successful in the preparation of a wide range of perovskite type oxides and is proving to be particularly useful in this case. A study of the process parameters which affect the structure and morphology of the film is presented. LaO.67CaO.33Mn03 has been grown on SrTi03 using an XeCl excimer laser; some of the films were later processed under different pressures of oxygen at 950 °C. The effect of growth temperature, laser pulse energy and oxygen annealing pressure were investigated using X ray diffraction and electron microscopy. Highly oriented growth was observed in samples grown below 700 °C in the (200) direction, coincident with the substrate orientation. The samples grown at higher temperature are polycrystalline and their crystalline order improves with post-growth annealing at 950 °C in an oxygen flux.

LANTHANUM CALCIUM MANGANITE GROWN BY LASER ABLATION: OPTIMISATION OF THE DEPOSITION PARAMETERS

BE Watts;G Bocelli;
1996

Abstract

Lanthanum manganite doped with alkaline earths have become of interest for their magneto resistive properties. Pulsed laser ablation has been very successful in the preparation of a wide range of perovskite type oxides and is proving to be particularly useful in this case. A study of the process parameters which affect the structure and morphology of the film is presented. LaO.67CaO.33Mn03 has been grown on SrTi03 using an XeCl excimer laser; some of the films were later processed under different pressures of oxygen at 950 °C. The effect of growth temperature, laser pulse energy and oxygen annealing pressure were investigated using X ray diffraction and electron microscopy. Highly oriented growth was observed in samples grown below 700 °C in the (200) direction, coincident with the substrate orientation. The samples grown at higher temperature are polycrystalline and their crystalline order improves with post-growth annealing at 950 °C in an oxygen flux.
1996
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
9728283172
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/127699
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