An excitonic pairing mechanism is proposed for electron-doped Cu-O layers. In contrast with previously proposed models for hole-doped CuO2 and BiO3-based perovskites, the inclusion of the O-O hopping matrix element is relevant in order to obtain pairing. Proximity of Cu and O levels, a gap in the electronic spectrum, and nearest-neighbor Cu-O repulsion are necessary conditions in order to obtain pairing as in the hole-doped case.
EXCITONIC PAIRING IN ELECTRON-DOPED CU-O LAYERS
Lorenzana J;
1990
Abstract
An excitonic pairing mechanism is proposed for electron-doped Cu-O layers. In contrast with previously proposed models for hole-doped CuO2 and BiO3-based perovskites, the inclusion of the O-O hopping matrix element is relevant in order to obtain pairing. Proximity of Cu and O levels, a gap in the electronic spectrum, and nearest-neighbor Cu-O repulsion are necessary conditions in order to obtain pairing as in the hole-doped case.File in questo prodotto:
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