An aspect which has hindered the development of ferroelectric memories is dielectric fatigue and to resolve this conducting oxides are promising candidates as an electrode material for lead zirconate titanate thin films. In this work ferroelectric films have been grown by pulsed laser deposition on ruthenium oxide electrodes. The phase distribution, microstructure and the effect of subsequent heat treatment have been studied by grazing angle X ray diffraction and electron microscopy; the results and implications for use of RuO2 as the bottom electrode during vapour phase deposition are discussed.
Microstructural Characterisation of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on RuO2 Electrodes by Laser Ablation
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1996
Abstract
An aspect which has hindered the development of ferroelectric memories is dielectric fatigue and to resolve this conducting oxides are promising candidates as an electrode material for lead zirconate titanate thin films. In this work ferroelectric films have been grown by pulsed laser deposition on ruthenium oxide electrodes. The phase distribution, microstructure and the effect of subsequent heat treatment have been studied by grazing angle X ray diffraction and electron microscopy; the results and implications for use of RuO2 as the bottom electrode during vapour phase deposition are discussed.File in questo prodotto:
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