As capping represents one of the most important ways of protecting the GaAs (100) surface from air oxidation during the transfer from the MBE chamber to another UHV system not directly coonected with it. The paper describes the most relevant results achied by scanning probe microscopy on GaAs surfaces after thermal decapping of As-capped GaAs (100) surfaces.
Thermal decapping of As-capped GaAs (100) surfaces: a scanning probe microscopy study
G Padeletti;GM Ingo;
1996
Abstract
As capping represents one of the most important ways of protecting the GaAs (100) surface from air oxidation during the transfer from the MBE chamber to another UHV system not directly coonected with it. The paper describes the most relevant results achied by scanning probe microscopy on GaAs surfaces after thermal decapping of As-capped GaAs (100) surfaces.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
