A novel method for the formation of ultrathin polycrystal semiconductor layers based on the Langmuir-Blodgett technique is reported. The proposed approach allows the synthesis of layers of pure compounds belonging to the II-VI groups such as CdS and PbS with a thickness resolution of 0.8 nm starting from Langmuir-Blodgett films of fatty acid salts exposed to an atmosphere of hydrogen sulfide. The layers formed are characterized by Brewster angle microscopy on the solid substrate showing good uniformity and constant thickness. This new method could have interesting applications in the formation of thin sensitive layer transducers for enhanced performance field-effect based biosensors such as ChemFET or ISFET.
Formation and characterization of an ultrathin semiconductor polycrystal layer for transducer applications
Facci P;
1997
Abstract
A novel method for the formation of ultrathin polycrystal semiconductor layers based on the Langmuir-Blodgett technique is reported. The proposed approach allows the synthesis of layers of pure compounds belonging to the II-VI groups such as CdS and PbS with a thickness resolution of 0.8 nm starting from Langmuir-Blodgett films of fatty acid salts exposed to an atmosphere of hydrogen sulfide. The layers formed are characterized by Brewster angle microscopy on the solid substrate showing good uniformity and constant thickness. This new method could have interesting applications in the formation of thin sensitive layer transducers for enhanced performance field-effect based biosensors such as ChemFET or ISFET.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.