The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported, The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized, Langmuir-Blodgett films of cadmium arachidate were transferred onto the stylus and exposed to a H2S atmosphere to yield CdS nanocrystals (30-50 Angstrom in diameter) imbedded into an organic matrix. The stylus, biased with respect to a flat electrode, was brought to the tunnel distance from the film and a constant gap value was maintained by a piezo-electric actuator driven by a feedback circuit fed by the tunneling current. With this set-up, it is possible to measure the behavior of the current flowing through the quantum dot when a bias voltage is applied. Voltage-current characteristics measured in the system displayed single-electron trends such as a Coulomb blockade and Coulomb staircase and revealed capacitance values as small as 10(-19) F.

Room-temperature single-electron junction

Facci P;
1996

Abstract

The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported, The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized, Langmuir-Blodgett films of cadmium arachidate were transferred onto the stylus and exposed to a H2S atmosphere to yield CdS nanocrystals (30-50 Angstrom in diameter) imbedded into an organic matrix. The stylus, biased with respect to a flat electrode, was brought to the tunnel distance from the film and a constant gap value was maintained by a piezo-electric actuator driven by a feedback circuit fed by the tunneling current. With this set-up, it is possible to measure the behavior of the current flowing through the quantum dot when a bias voltage is applied. Voltage-current characteristics measured in the system displayed single-electron trends such as a Coulomb blockade and Coulomb staircase and revealed capacitance values as small as 10(-19) F.
1996
1
info:eu-repo/semantics/article
262
Facci, P; Erokhin, V; Carrara, S; Nicolini, C
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/130259
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