We report on the structural and electrical properties of ZrO2 thin layers grown on Si by atomic layer chemical vapour deposition. Atomic force microscopy, X-ray diffraction, X-ray reflectivity and time-of-flight secondary ion mass spectrometry have been used to characterize as-grown and annealed samples. High frequency capacitance-voltage measurements have been performed to determine the capacitance of the gate dielectric stack. The ZrO2 film is found to be polycrystalline. Electrical and structural data suggest a coherent picture of film modification upon annealing.
Structural and electrical characterization of ALCVD ZrO2 thin films on silicon
S Spiga;G Tallarida;C Wiemer;
2002
Abstract
We report on the structural and electrical properties of ZrO2 thin layers grown on Si by atomic layer chemical vapour deposition. Atomic force microscopy, X-ray diffraction, X-ray reflectivity and time-of-flight secondary ion mass spectrometry have been used to characterize as-grown and annealed samples. High frequency capacitance-voltage measurements have been performed to determine the capacitance of the gate dielectric stack. The ZrO2 film is found to be polycrystalline. Electrical and structural data suggest a coherent picture of film modification upon annealing.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
