A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
Acoustoelectric luminescence from a field-effect n-i-p lateral junction
G De Simoni;L Sorba;G Biasiol;F Beltram
2009
Abstract
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.File in questo prodotto:
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