Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From the evolution of the Ru and Si core levels, we find that alloying takes place at the interface during growth and estimate the thickness of the intermixed region to be of the order of 15-20 ML. Annealing at increasingly high temperatures causes the formation of different silicide phases, which are discussed in relation to theoretical and experimental data on related transition metal silicides.
Formation and distribution of compounds at the Ru - Si(001) ultrathin film interface
L Pasquali;N Mahne;S Nannarone
2009
Abstract
Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From the evolution of the Ru and Si core levels, we find that alloying takes place at the interface during growth and estimate the thickness of the intermixed region to be of the order of 15-20 ML. Annealing at increasingly high temperatures causes the formation of different silicide phases, which are discussed in relation to theoretical and experimental data on related transition metal silicides.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
