The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE
1996
Abstract
The crystalline and optical quality of ZnS epilayers grown on (100)GaAs by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measurements point out that the crystalline and optical quality of the epilayers strongly depends on the VI/II precursor vapor phase stoichiometry as well as on GaAs surface treatments before the growth. Optimized MOVPE growth conditions have been determined.File in questo prodotto:
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