N-BASED ORGANOMETALLIC PRECURSORS FOR INP MOVPE

MOVPE is successfully employed in the preparation on a commercial scale of InP thin films and related semiconductor compounds. However, there are some drawbacks associated with the current methodology, mainly the environmental and health hazards of handling pyrophoric starting materials. Here we report on the studies about the synthesis of some new indium compounds which can overcome these problems . The decrease in their oxygen and moisture sensitivity has been obtained using N-ligands that, forming a coordinative In-N bond, leads to a saturation of the indium atom.