Uniform, good-quality TiO2 thin films were deposited on dental implants by employing Metal-Organic Chemical Vapour Deposition (MOCVD) technique at 420°C and using titaniumtetraisopropoxide as precursor. The films resulted anatase high oriented in (200) direction. These dental implants were therefore tested 'in vivo' and showed higher adhesion values in the first three months, with torque resistance increased by about 50% with respect to the untreated implants. Structural data are discussed to explain such good performance.

MOCVD deposition of TiO2 thin films on titanium dental implants

Gerbasi R;Porchia M;
1996

Abstract

Uniform, good-quality TiO2 thin films were deposited on dental implants by employing Metal-Organic Chemical Vapour Deposition (MOCVD) technique at 420°C and using titaniumtetraisopropoxide as precursor. The films resulted anatase high oriented in (200) direction. These dental implants were therefore tested 'in vivo' and showed higher adhesion values in the first three months, with torque resistance increased by about 50% with respect to the untreated implants. Structural data are discussed to explain such good performance.
1996
CHIMICA INORGANICA E DELLE SUPERFICI
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Dental alloys
Dental prostheses
Metallorganic chemical vapor deposition
Titanium dioxide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/137187
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