We have grown LaMnO 3 thin films on 001 LaAlO 3 substrates by pulsed laser deposition. X-ray diffraction confirms that the films are only slightly relaxed and are oriented "square on square" relative to the substrate. The measured Raman spectra closely resemble that observed in bulk LaMnO 3 , which indicates no relevant distortions of the MnO 6 octahedra induced by the epitaxial strain. Therefore, no detectable changes in the lattice dynamics occurred in our LaMnO 3 strained films relative to the bulk case. 55 Mn nuclear magnetic resonance identifies the presence of localized Mn 4+ states. Superconducting quantum interference device magnetization measures T N =1313 K and a saturation moment =1.09B /Mn, revealing a small concentration of Mn 4+ and placing our films within the antiferromagnetic insulating phase.
Preparation and characterisation of LaMnO(3) thin films grown by pulsed laser deposition
G Balestrino;D Di Castro;P Postorino;P Dore;
2006
Abstract
We have grown LaMnO 3 thin films on 001 LaAlO 3 substrates by pulsed laser deposition. X-ray diffraction confirms that the films are only slightly relaxed and are oriented "square on square" relative to the substrate. The measured Raman spectra closely resemble that observed in bulk LaMnO 3 , which indicates no relevant distortions of the MnO 6 octahedra induced by the epitaxial strain. Therefore, no detectable changes in the lattice dynamics occurred in our LaMnO 3 strained films relative to the bulk case. 55 Mn nuclear magnetic resonance identifies the presence of localized Mn 4+ states. Superconducting quantum interference device magnetization measures T N =1313 K and a saturation moment =1.09B /Mn, revealing a small concentration of Mn 4+ and placing our films within the antiferromagnetic insulating phase.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
