We report on a Raman study of the phonon spectrum of La 0.7 Sr 0.3 MnO 3 thin films epitaxially grown on LaAlO 3 . The spectrum, as a function of film thickness d, does not change over the 1000-100 ?A range, whereas a strong hardening of the phonon frequencies of both bending and stretching modes is apparent in ultra-thin films (d < 100 ?A) where substrate-induced effects are remarkable. This behaviour, which appears to be related with the measured d-dependence of the insulator-to-metal transition tem- perature, is ascribed to co-operative effects of MnO 6 octahedra rotation and charge-localization. Raman spectroscopy proves to be a simple and powerful tool to monitor subtle structural modifications hardly detectable with conventional diffraction techniques in ultra-thin films.
Raman measurements on thin films of the La(0.7)Sr(0.3)MnO(3) manganite: a probe of substrate-induced effects
P Dore;P Postorino;
2005
Abstract
We report on a Raman study of the phonon spectrum of La 0.7 Sr 0.3 MnO 3 thin films epitaxially grown on LaAlO 3 . The spectrum, as a function of film thickness d, does not change over the 1000-100 ?A range, whereas a strong hardening of the phonon frequencies of both bending and stretching modes is apparent in ultra-thin films (d < 100 ?A) where substrate-induced effects are remarkable. This behaviour, which appears to be related with the measured d-dependence of the insulator-to-metal transition tem- perature, is ascribed to co-operative effects of MnO 6 octahedra rotation and charge-localization. Raman spectroscopy proves to be a simple and powerful tool to monitor subtle structural modifications hardly detectable with conventional diffraction techniques in ultra-thin films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
