The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structuresfabricated on silicon substrates is presented. The CRD structures are self-assembled viadroplet epitaxy, a growth technique which, due to its low thermal budget, is compatible withthe monolithic integration of III-V devices on Si based electronic circuits. Continuous wave,time resolved photoluminescence and theoretical calculations in the effective massapproximations are presented for the assessment of the electronic and carrier properties of theCRDs. The CRDs show a fast carrier dynamics which
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si substrates
L Cavigli;
2012
Abstract
The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structuresfabricated on silicon substrates is presented. The CRD structures are self-assembled viadroplet epitaxy, a growth technique which, due to its low thermal budget, is compatible withthe monolithic integration of III-V devices on Si based electronic circuits. Continuous wave,time resolved photoluminescence and theoretical calculations in the effective massapproximations are presented for the assessment of the electronic and carrier properties of theCRDs. The CRDs show a fast carrier dynamics whichFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
