Dislocation atmospheres in bulk GaAs:Te have been studied using different probe beam techniques, either optical or electronic. The recombinative atmospheres were chemically revealed by DSL and then studied by electron beam induced current (EBIC) and microRaman spectroscopy. Carrier depletion of local crystal misorientations were the main observations, Transmission electron microscopy (TEM) allowed an identification of the microstructure of these atmospheres. The formation of microloops appears as the mean reasonf or the structural changeso bserved. A possiblef ormation mechanismi s discussed.
A study of dislocations in GaAs:Te using electron and optical beams
1996
Abstract
Dislocation atmospheres in bulk GaAs:Te have been studied using different probe beam techniques, either optical or electronic. The recombinative atmospheres were chemically revealed by DSL and then studied by electron beam induced current (EBIC) and microRaman spectroscopy. Carrier depletion of local crystal misorientations were the main observations, Transmission electron microscopy (TEM) allowed an identification of the microstructure of these atmospheres. The formation of microloops appears as the mean reasonf or the structural changeso bserved. A possiblef ormation mechanismi s discussed.File in questo prodotto:
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