This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsulated Czochralski gallium arsenide detectors fabricated with thicknesses of 80, 200, and 300 micron. The results, obtained within the context of the RD-8 project, show that low values of charge-collection efficiency cannot be ascribed primarily to primarily to the presence of high concentrations of EL2 defects. Possible ways of increasing the charge-collection efficiency are briefly addressed.

Influence of electron traps on charge collection efficiency in GaAs radiation detectors

1994

Abstract

This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsulated Czochralski gallium arsenide detectors fabricated with thicknesses of 80, 200, and 300 micron. The results, obtained within the context of the RD-8 project, show that low values of charge-collection efficiency cannot be ascribed primarily to primarily to the presence of high concentrations of EL2 defects. Possible ways of increasing the charge-collection efficiency are briefly addressed.
1994
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
GaAs
electron traps
charge collection
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/140897
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