Epitaxial InP has been grown via MOCVD by using a new precursor and characterized mainly by low-temperature photoluminescence and Hall effect measurements. The results point to satisfactory electrical and optical proprties.
A new precursor for InP growth via MOVPE : [Et2InNMe2]2.
V Corrado;G Rossetto;M Porchia;
1993
Abstract
Epitaxial InP has been grown via MOCVD by using a new precursor and characterized mainly by low-temperature photoluminescence and Hall effect measurements. The results point to satisfactory electrical and optical proprties.File in questo prodotto:
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