High-gradeMgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low-energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time, we report the band mapping along the Gamma-A direction and the estimation of the electronphonon coupling constant = 0.55 ± 0.06 for the surface state electrons
Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)
Cepek C;Larciprete R;
2006
Abstract
High-gradeMgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low-energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time, we report the band mapping along the Gamma-A direction and the estimation of the electronphonon coupling constant = 0.55 ± 0.06 for the surface state electronsFile in questo prodotto:
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