Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.

Evidence of a pressure-induced metallization process in monoclinic VO2

Di Castro D;Lupi S;Malavasi L;Postorino P
2007

Abstract

Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
2007
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
INFM
METAL-INSULATOR TRANSITIONS
MOTT-HUBBARD
BAND THEORY
TEMPERATURE
DEPENDENCE
VO2
Pressure-Induced
Metallization
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/144044
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