This paper shows a comprehensive experimental and numerical investigation of proton-irradiated diodes for high-power snubberless applications. By means of DC and transient current-voltage measurements, OCVD extraction of lifetimes, C-V profiling, and DLTS trap characterization, a wide set of parameters was experimentally extracted and fed into a physically accurate mixed-mode simulation model. The numerical results are shown to be consistent with the available measured data, for example in showing the much better turn-off softness of proton-irradiated samples versus electron-irradiated ones. The complete physical/electrical model set-up in this work can now be used as an aid in the design and development of new proton-irradiated diodes.
Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications
Bianconi M;Gombia E;Mosca R
2005
Abstract
This paper shows a comprehensive experimental and numerical investigation of proton-irradiated diodes for high-power snubberless applications. By means of DC and transient current-voltage measurements, OCVD extraction of lifetimes, C-V profiling, and DLTS trap characterization, a wide set of parameters was experimentally extracted and fed into a physically accurate mixed-mode simulation model. The numerical results are shown to be consistent with the available measured data, for example in showing the much better turn-off softness of proton-irradiated samples versus electron-irradiated ones. The complete physical/electrical model set-up in this work can now be used as an aid in the design and development of new proton-irradiated diodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.