Thin films of samarium-oxide-doped (20 mol%) ceria (SDC) are grown by pulsed-laser deposition (PLD) on (001) MgO single-crystal substrates. SrTiO3 (STO) prepared by PLD is used as a buffer layer on the MgO substrates to enable epitaxial growth of the fluorite-structured SDC film; the STO layer provides a proper crystalline match between SDC and MgO, resulting in highly crystalline, epitaxial SDC films grown in the (001) orientation. Film conductivity is evaluated by electrochemical impedance spectroscopy measurements, which are performed at various temperatures (400-775 8C) in a wide range of oxygen partial pressure ( pO2) values (10251 atm) in order to separate ionic and electronic conductivity contributions. At 700 8C, SDC/ STO films on (100) MgO exhibit a dominant ionic conductivity of about 7102S cm1, down to pO2 values of about 1015 atm. The absence of grain boundaries make the SDC/STO/MgO heterostructures stable to oxidation-reduction cycles at high temperatures, in contrast to that observed for the more disordered SDC/STO films, which degraded after hydrogen exposure.
Fabrication and Electrochemical Properties of Epitaxial Samarium-Doped Ceria Films on SrTiO3-Buffered MgO Substrates
Antonello Tebano;Giuseppe Balestrino;
2010
Abstract
Thin films of samarium-oxide-doped (20 mol%) ceria (SDC) are grown by pulsed-laser deposition (PLD) on (001) MgO single-crystal substrates. SrTiO3 (STO) prepared by PLD is used as a buffer layer on the MgO substrates to enable epitaxial growth of the fluorite-structured SDC film; the STO layer provides a proper crystalline match between SDC and MgO, resulting in highly crystalline, epitaxial SDC films grown in the (001) orientation. Film conductivity is evaluated by electrochemical impedance spectroscopy measurements, which are performed at various temperatures (400-775 8C) in a wide range of oxygen partial pressure ( pO2) values (10251 atm) in order to separate ionic and electronic conductivity contributions. At 700 8C, SDC/ STO films on (100) MgO exhibit a dominant ionic conductivity of about 7102S cm1, down to pO2 values of about 1015 atm. The absence of grain boundaries make the SDC/STO/MgO heterostructures stable to oxidation-reduction cycles at high temperatures, in contrast to that observed for the more disordered SDC/STO films, which degraded after hydrogen exposure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
