This work deals with the characterization of nanocrystalline (nc) silicon films, grown using the plasma enhanced chemical vapour deposition (PECVD) process based on a lowvoltage- high-current arc discharge plasma named LEPECVD (low-energy PECVD). The structural, electrical and chemical properties of the LEPECVD grown films have been studied as a function of the deposition parameters (substrate temperature, growth rate, silane dilution). The results show that the films consist of elongated nanocrystals along the /11 1Sdirection, embedded in an amorphous matrix. The crystallite size along the /1 11S direction is in the range of 9-20 nm. The volume fraction of crystallinity (wc) varies between 51% and 78%, depending on preparation conditions. Conductivity values of the order of 106O1 cm1 for the layers were measured, making the material suitable for the p-i-n junction application.
Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications
M Bollani;
2005
Abstract
This work deals with the characterization of nanocrystalline (nc) silicon films, grown using the plasma enhanced chemical vapour deposition (PECVD) process based on a lowvoltage- high-current arc discharge plasma named LEPECVD (low-energy PECVD). The structural, electrical and chemical properties of the LEPECVD grown films have been studied as a function of the deposition parameters (substrate temperature, growth rate, silane dilution). The results show that the films consist of elongated nanocrystals along the /11 1Sdirection, embedded in an amorphous matrix. The crystallite size along the /1 11S direction is in the range of 9-20 nm. The volume fraction of crystallinity (wc) varies between 51% and 78%, depending on preparation conditions. Conductivity values of the order of 106O1 cm1 for the layers were measured, making the material suitable for the p-i-n junction application.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
