Reflectance versus incidence angle measurements have been performed from 5 to152 nm on samples of SiC with a different C/Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.
Reflectance measurements and optical constants in the EUV-VUV region for SiC with different C/Si ratio
F Frassetto;A Giglia;
2006
Abstract
Reflectance versus incidence angle measurements have been performed from 5 to152 nm on samples of SiC with a different C/Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.File in questo prodotto:
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