Gap opening in graphene is usually discussed in terms of a semiconductinglike spectrum, where the appearance of a finite gap at the Dirac point is accompanied by a finite mass for the fermions. In this paper we propose a gap scenario from graphene which preserves the massless characters of the carriers. This approach explains recent spectroscopic measurements carried out in epitaxially grown graphene, ranging from photoemission to optical transmission.

Spectroscopic signatures of massless gap opening in graphene

L. Benfatto;E. Cappelluti
2008

Abstract

Gap opening in graphene is usually discussed in terms of a semiconductinglike spectrum, where the appearance of a finite gap at the Dirac point is accompanied by a finite mass for the fermions. In this paper we propose a gap scenario from graphene which preserves the massless characters of the carriers. This approach explains recent spectroscopic measurements carried out in epitaxially grown graphene, ranging from photoemission to optical transmission.
2008
Istituto dei Sistemi Complessi - ISC
INFM
EPITAXIAL GRAPHENE
CONDUCTIVITY
BANDGAP
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/148204
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