We report high structural order in thin films of the organic semiconductor perfluoro-pentacene (PFP), which is a candidate material for n-type applications, deposited by vacuum sublimation on oxidized silicon wafers. Bragg reflections up to high order in both specular and grazing incidence geometries and a mosaicity of less than 0.01° demonstrate the well defined structure. The thin film entirely consists of crystallites with a structure close to the bulk phase without any contamination with a second phase. Real-time X-ray measurements show that PFP grows in a Stranski–Krastanov growth mode with the first monolayer wetting the substrate before 3d-growth sets in during growth of the second monolayer. Implications for its use are discussed.

Structure, morphology, and growth dynamics of perfluoro-pentacene thin films

Milita S;Borgatti F;Biscarini F;
2008

Abstract

We report high structural order in thin films of the organic semiconductor perfluoro-pentacene (PFP), which is a candidate material for n-type applications, deposited by vacuum sublimation on oxidized silicon wafers. Bragg reflections up to high order in both specular and grazing incidence geometries and a mosaicity of less than 0.01° demonstrate the well defined structure. The thin film entirely consists of crystallites with a structure close to the bulk phase without any contamination with a second phase. Real-time X-ray measurements show that PFP grows in a Stranski–Krastanov growth mode with the first monolayer wetting the substrate before 3d-growth sets in during growth of the second monolayer. Implications for its use are discussed.
2008
Istituto per la Microelettronica e Microsistemi - IMM
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Inglese
2
3
120
122
3
http://onlinelibrary.wiley.com/doi/10.1002/pssr.200802052/abstract
Sì, ma tipo non specificato
X-ray diffraction
real-time investigation
9
info:eu-repo/semantics/article
262
Kowarik, S; Gerlach, A; Hinderhofer, A; Milita, S; Borgatti, F; Zontone, F; Suzuki, T; Biscarini, F; Schreiber, F
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/148240
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