The deposition kinetics for MOCVD film growth was investigated in a range of common process parameters during laminar fòlow in orizontal hot wall tubolar reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modelling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions. The starting point was the official modelling procedure of members of CVD project of Society of Chemical Engineers of Japan. On the other hand, details of experimental verification werw given for low pressure MOCVD deposition of TiO2 and Al"O3 films.
Design of MOCVD film growth in a hot wall tubular reactor
2003
Abstract
The deposition kinetics for MOCVD film growth was investigated in a range of common process parameters during laminar fòlow in orizontal hot wall tubolar reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modelling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions. The starting point was the official modelling procedure of members of CVD project of Society of Chemical Engineers of Japan. On the other hand, details of experimental verification werw given for low pressure MOCVD deposition of TiO2 and Al"O3 films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
