We compare the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots with that obtained from InGaNAsN/GaAs quantum wells grown in the same experimental system. All structures were engineered to emit near 1.3 mm at room temperature. Quantum-dot emitters were found to exhibit higher thermal stability and did not require postgrowth annealing. The use of GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot luminescence.
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison.
E Carlino;F Martelli;A Franciosi
2005
Abstract
We compare the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots with that obtained from InGaNAsN/GaAs quantum wells grown in the same experimental system. All structures were engineered to emit near 1.3 mm at room temperature. Quantum-dot emitters were found to exhibit higher thermal stability and did not require postgrowth annealing. The use of GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot luminescence.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
