Brillouin light scattering from thermal spin waves has been exploited to investigate the thickness dependence of magnetic anisotropy of Ni films, with thickness in the range 7-35 nm, grown by electrodeposition onto either s011d- or s001d-GaAs substrates. In the former case, Ni films exhibit a well-defined in-plane uniaxial anisotropy induced by the symmetry of the substrate. In the case of the s001d-GaAs substrate, instead, the magnetic anisotropy results from a combination of both a fourfold and a twofold contribution. The physical mechanisms responsible for the observed anisotropy, as well as its dependence on film thickness, are discussed in detail.

Thickness dependence of magnetic anisotropy in thin Ni films electrode posited onto the (011) and (001) surfaces of n-GaAs

G Gubbiotti;
2005

Abstract

Brillouin light scattering from thermal spin waves has been exploited to investigate the thickness dependence of magnetic anisotropy of Ni films, with thickness in the range 7-35 nm, grown by electrodeposition onto either s011d- or s001d-GaAs substrates. In the former case, Ni films exhibit a well-defined in-plane uniaxial anisotropy induced by the symmetry of the substrate. In the case of the s001d-GaAs substrate, instead, the magnetic anisotropy results from a combination of both a fourfold and a twofold contribution. The physical mechanisms responsible for the observed anisotropy, as well as its dependence on film thickness, are discussed in detail.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/149988
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