We present a quantum-dot microcavity light-emitting diode emitting at 1.3 mm at room temperature. The long wavelength emission is achieved by using InGaAs quantum dots directly grown on GaAs, by metalorganic chemical vapor deposition. The device exhibits electroluminescence bright emission, peaked at 1298 nm and with a full width at half maximum of 6.5 meV.
Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 µm and grown by metal organic chemical vapor deposition
V Tasco;MT Todaro;M De Giorgi;A Passaseo;
2004
Abstract
We present a quantum-dot microcavity light-emitting diode emitting at 1.3 mm at room temperature. The long wavelength emission is achieved by using InGaAs quantum dots directly grown on GaAs, by metalorganic chemical vapor deposition. The device exhibits electroluminescence bright emission, peaked at 1298 nm and with a full width at half maximum of 6.5 meV.File in questo prodotto:
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