Si1-xCx thin films have been deposited by pulsed laser ablation of a ceramic silicon carbide target in vacuum. The influence of deposition parameters on the crystallinity of the samples was investigated. Both the substrate temperature and laser fluence were increased up to 850K and 10J/cm(2), respectively. The samples deposited at room temperature are amorphus, while a phase transition from amorphous to a microcrystalline state of SiC occurs increasing the substrate temperature. The increase of the laser fluence favours the enhancement both of the Si-C bonds and of the crystalline phase.
Effects of deposition parameters on PLA prepared thin SiC films
Trusso S
2004
Abstract
Si1-xCx thin films have been deposited by pulsed laser ablation of a ceramic silicon carbide target in vacuum. The influence of deposition parameters on the crystallinity of the samples was investigated. Both the substrate temperature and laser fluence were increased up to 850K and 10J/cm(2), respectively. The samples deposited at room temperature are amorphus, while a phase transition from amorphous to a microcrystalline state of SiC occurs increasing the substrate temperature. The increase of the laser fluence favours the enhancement both of the Si-C bonds and of the crystalline phase.File in questo prodotto:
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