RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure.

Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer

Cianci E;Foglietti V;Marcelli R;
2007

Abstract

RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure.
2007
Istituto di fotonica e nanotecnologie - IFN
Istituto per la Microelettronica e Microsistemi - IMM
RF MEMS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/151078
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