The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 degrees C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires. (C) 2008 American Institute of Physics.
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures
Rubini S;Martelli F;Mariucci L;Gerardino A
2008
Abstract
The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200 degrees C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires. (C) 2008 American Institute of Physics.File in questo prodotto:
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