We report an experimental and first-principles study of the thermal decomposition of 6H-SiC wafers, yielding graphite on the Si-terminated face and carbon nanotubes on the C-terminated face. The asymmetry of the carbon structure formation mechanisms is rationalized in terms of the different termination geometries of the opposite SIC faces. First-principles modeling reveals that horizontal, pi-delocalized carbon structures form on the Si-terminated face. The bonding network geometry of the C-terminated face favors instead the formation of vertically oriented carbon structures, which can be interpreted as nanotube lateral wall precursors.

A Spectroscopic and ab Initio Study of the Formation of Graphite and Carbon Nanotubes from Thermal Decomposition of Silicon Carbide

Levita G;Larciprete R;
2008

Abstract

We report an experimental and first-principles study of the thermal decomposition of 6H-SiC wafers, yielding graphite on the Si-terminated face and carbon nanotubes on the C-terminated face. The asymmetry of the carbon structure formation mechanisms is rationalized in terms of the different termination geometries of the opposite SIC faces. First-principles modeling reveals that horizontal, pi-delocalized carbon structures form on the Si-terminated face. The bonding network geometry of the C-terminated face favors instead the formation of vertically oriented carbon structures, which can be interpreted as nanotube lateral wall precursors.
2008
Istituto dei Sistemi Complessi - ISC
INFM
HETEROEPITAXIAL GRAPHITE
INTERFACE FORMATION
6H-SIC(0001)
GRAPHITIZATION
SIC(0001)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/152233
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